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| SUD50N03-16P New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 FEATURES ID (A)a 15 12 rDS(on) (W) 0.016 @ VGS = 10 V 0.024 @ VGS = 4.5 V D TrenchFETr Power MOSFET D PWM Optimized D 100% Rg Tested APPLICATIONS D High-Side DC/DC - Desktop - Server D DDR DC/DC Converter TO-252 D Drain Connected to Tab G D S G Top View Ordering Information: SUD50N03-16P--E3 (Lead Free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25_C Continuous Drain Currenta TA = 25_C TA = 100_C Pulsed Drain Current Continuous Source Current (Diode Conduction)a Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range L = 0 1 mH 0.1 TC = 25_C TA = 25_C IDM IS IAS EAS PD TJ, Tstg ID Symbol VDS VGS Limit 30 "20 37 15 10.6 40 5 25 31.25 40.8 6.5a -55 to 175 Unit V A mJ W _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction to Ambienta Junction-to-Ambient Maximum Junction-to-Case Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 72634 S-40466--Rev. A, 15-Mar-04 www.vishay.com t v 10 sec Steady State Symbol RthJA RthJC Typical 18 40 3.0 Maximum 23 50 3.7 Unit _C/W C/W 1 SUD50N03-16P Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On State Drain-Source On-State Resistanceb Forward Transconductanceb V(BR)DSS VGS(th) IGSS IDSS ID(on) rDS(on) gfs VGS = 0 V, ID = 250 mA VDS = VGS, ID = 250 mA VDS = 0 V, VGS = "20 V VDS = 30 V, VGS = 0 V VDS = 30 V, VGS = 0 V, TJ = 125_C VDS = 5 V, VGS = 10 V VGS = 10 V, ID = 15 A VGS = 10 V, ID = 20 A, TJ = 125_C VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 20 A 10 0.019 40 0.0128 0.016 0.025 0.024 S W 30 1.0 3.0 "100 1 50 V nA mA A Symbol Test Condition Min Typa Max Unit Dynamica Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Chargec Gate-Drain Chargec Gate Resistance Turn-On Delay Timec Rise Timec Turn-Off Delay Timec Fall Timec Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf VDD = 15 V, RL = 0.3 W ID ^ 50 A, VGEN = 10 V, Rg = 2.5 W 2.7 VDS = 15 V, VGS = 4.5 V, ID = 50 A VGS = 0 V, VDS = 25 V, f = 1 MHz 1150 215 70 8.5 5 2.5 5.5 7 20 25 12 8.25 15 30 40 20 ns W 13 nC p pF Source-Drain Diode Ratings and Characteristic (TC = 25_C) Pulsed Current Diode Forward Voltageb Source-Drain Reverse Recovery Time ISM VSD trr IF = 20 A, VGS = 0 V IF = 40 A, di/dt = 100 A/ms 1.0 25 40 1.5 70 A V ns Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. c. Independent of operating temperature. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 60 VGS = 10 thru 5 V 50 I D - Drain Current (A) 40 30 20 10 3V 0 0 2 4 6 8 10 VDS - Drain-to-Source Voltage (V) www.vishay.com 0 0 1 2 3 4 5 6 VGS - Gate-to-Source Voltage (V) Document Number: 72634 S-40466--Rev. A, 15-Mar-04 4V I D - Drain Current (A) 50 40 30 20 10 60 Transfer Characteristics TC = 125_C 25_C -55_C 2 SUD50N03-16P New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Transconductance 60 TC = -55_C r DS(on)- On-Resistance ( W ) 50 g fs - Transconductance (S) 25_C 40 125_C 30 20 10 0 0 5 10 15 20 25 30 0.04 0.05 Vishay Siliconix On-Resistance vs. Drain Current 0.03 VGS = 4.5 V 0.02 VGS = 10 V 0.01 0.00 0 10 20 30 40 50 60 ID - Drain Current (A) 1500 ID - Drain Current (A) 10 VDS = 15 V ID = 50 A Capacitance Ciss Gate Charge 1200 C - Capacitance (pF) V GS - Gate-to-Source Voltage (V) 8 900 6 600 Coss Crss 0 0 5 10 15 20 25 30 VDS - Drain-to-Source Voltage (V) 4 300 2 0 0 3 6 9 12 15 18 Qg - Total Gate Charge (nC) 2.1 On-Resistance vs. Junction Temperature VGS = 10 V ID = 15 A I S - Source Current (A) 100 Source-Drain Diode Forward Voltage 1.8 rDS(on) - On-Resiistance (Normalized) 1.5 TJ = 150_C 10 TJ = 25_C 1.2 0.9 0.6 -50 -25 0 25 50 75 100 125 150 175 1 0 0.3 0.6 0.9 1.2 1.5 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (_C) Document Number: 72634 S-40466--Rev. A, 15-Mar-04 www.vishay.com 3 SUD50N03-16P Vishay Siliconix THERMAL RATINGS Maximum Drain Current vs. Ambiemt Temperature 20 New Product 100 Limited by rDS(on) 10 I D - Drain Current (A) Safe Operating Area 10 ms 100 ms 1 ms 10 ms 15 I D - Drain Current (A) 10 1 100 ms 1s 5 0.1 10 s TA = 25_C Single Pulse dc, 100 s 0 0 25 50 75 100 125 150 175 TA - Ambient Temperature (_C) 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 1 10 100 1000 Square Wave Pulse Duration (sec) Normalized Thermal Transient Impedance, Junction-to-Case 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.02 0.05 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (sec) 1 10 100 www.vishay.com 4 Document Number: 72634 S-40466--Rev. A, 15-Mar-04 |
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